Electron transport and thermoelectric properties of ZnO ceramics doped with Fe

Currently, special attention is paid to the search for new ceramic materials based on wide-gap oxides, as well study of their structure and properties with a view application in various areas electronic optoelectronic industry. Conventional double-step technology has been used obtain samples this experiment. After compacting at pressure 6 GPa ZnO ZnO-Fe x O y powders different weight relations, were subjected procedure synthesis 1173 K 2 h then annealing 1473 3 air. The was investigated by Scanning Electron Microscopy (SEM), Energy-dispersive X-ray Spectroscopy (EDX), Diffraction (XRD) Raman spectroscopy methods. Temperature dependences resistivity, magnetoresistance, Hall Seebeck effects experimentally studied range from 4 700 K. As experiments have shown, size grains obtained after submicron range. An XRD showed saving wurtzite Zn 1-? Fe ? solid solutions where 0.66 < 0.81 at. % regardless type doping agent. At same time, replacement zinc iron atoms led contraction lattice. All (ZnO O) demonstrate n-type conductivity. temperature dependencies resistivity shown two specific features: presence energy level about 0.35 eV below conduction band bottom doped (unknown literature) conductance changing activation temperatures 200 undoped samples. coefficient increased by100–150% due growth electron concentration. Some model concepts scattering mechanisms reasons effect enhancement developed. • Ceramic oxides. Investigation SEM, EDX, Size Saving Zn1-?Fe?O solutions. Studied Zn1-?Fe?O)